本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。
The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied.
在胶粒生长后期，施主原子浓度可以近似地用杂质临界浓度表示。
At the late period of growth of colloidal particles, the concentration of donor atoms can be approximately represented by the critical concentration of impurity.
本文采用二级微扰方法研究厚度对抛物量子点内浅施主杂质处于磁场中极化子效应的影响。
Thickness effect on the shallow donor in parabolic quantum dots within magnetic fields is investigated by using the second-order perturbation method.
控制施主浓度和掺杂等电子杂质，可以获得低吸收锗窗。
Germanium window with low absorption will be obtained through controlling donor concentration and doping isoelectronic im purity.
通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
Electron probe microanalyses and Hall effect were used to measure the variations of Ge dopant and its related donor and acceptor concentrations.
探讨了施主杂质、受主杂质等微量元素及玻璃料对PT C陶瓷性能的影响。
Effects of donors, acceptors, and other trace elements and the frit on properties of the PTC ceramics are discussed.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
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