对金刚石双极器件和金刚石场效应管进行了分析。
The diamond bipolar devices and the diamond FET are described.
电源开关应用垂直场效应管技术来确保最佳的阻态。
The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
本文提出了一种用两个场效应管实现的压控线性电阻电路。
A voltage controlled linear resistor which consists of only two field-effect transistors (FET) is presented.
在高频头中的射频电平调节电路中使用了双栅极场效应管；
Employing a bigrid EFT, the modulator circuit in the rf head is designed for rf level control.
本书讲述了场效应管电路的原理分析，是不可多得的好教材！
This book describes the principle of FET circuit analysis, it is rare good material!
设计的关键是怎样计算场效应管的输入电容来实现推动级的设计。
Key to the design is how to calculate the capacity of field effect tubes for designing the driver.
针对典型场效应管开关电路的缺点，提出了一种新的场效应管开关。
Aiming at the shortcoming of the typical field-effect transistor (FET) switch, this paper proposes a kind of novel FET switch.
我们对比一台美国制造的价值2400美元的FET场效应管功放。
本文详细分析了用于射频集成电路设计的mos场效应管的稳定特性。
The stability analysis of MOSFET used in RFIC design is presented in detail.
该分频器采用源极耦合场效应管逻辑电路，基本结构与T触发器相同。
The divider is designed in the Source Coupled Logic, with the structure being similar to the t filp flop.
梦幻输出，垂直场效应管FET功放，这个是第一个全FET功率放大器。
The dream output element, the vertical power FET, was used for the first time in this all-FET power amplifier.
为了适应高速度的要求，所有电路全都采用源极耦合场效应管逻辑来实现。
In order to meet with the requirements of high-speed, the source coupled FET logic (SCFL) is applied in all of the circuits.
采用吸附方法将TRAIL抗体制备在离子敏场效应管敏感栅上形成生物敏感膜。
The sensor uses protein A and TRAIL antibody sensitive membrane as the ISFET gate through absorbing process.
此类直接型数字平板探测仪由薄膜晶体场效应管(TFT)阵列与光传导器组成。
The FPD is composed by Thin Film Transistors (TFT) arrays and photo-conductive sensors.
通过分析比较，最终采用基于双环结构和场效应管相结合的模拟预失真模块方案。
Through the analysis and comparison, the FET-based analog predistorter with dual-loops is adopted for this design.
优化有机晶体的生长工艺是获得性能优良的有机场效应管（OFET）的重要基础。
Optimization of the organic crystal fabrication process is important for obtaining the high performance of organic field-effect transistors (OFETs).
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本文着重研究基于高压场效应管的低晃动、宽脉宽、快前沿及快后沿的高压快脉冲源。
In this paper, we mainly study on a kind of high-voltage pulser with low jitter, wide pulse width and fast front and back pulse edge, which is based on high-voltage power MOSFET.
电路采用源极耦合场效应管逻辑（SCFL），与静态CMOS逻辑相比具有更高的速度。
SCFL circuits are used because of the higher speed compared to static CMOS.
根据夹断电压能确定可变电阻区与饱和区的分界点，使场效应管可靠地工作在饱和区的原理。
On the grounds of the pinch-off voltage, the cut-off point of variable resistance area and saturation area can be fixed, so the field effect tube can reliably work in the saturation area.
本发明提供的硅和氧化物场效应管不仅把钙钛矿氧化物和硅电子学结合起来，具有功能特性。
The silicon and oxide field effect transistor provided by the invention not only combines perovskite oxides and silicon electronics, but also has the functional characteristics.
用继电器即可；但如果需要调速，可以使用三极管，场效应管等开关元件实现PWM（脉冲宽度调制）调速。
With the relay can be; but if you need to speed, you can use the transistor, FET and other switching elements to achieve PWM (pulse width modulation) speed.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
本文叙述应用具有GP-IB接口的自动测试系统对结型场效应管的SPICE模型参数进行测试的近似方法。
A method for approximately estimating the SPICE modelling parameters of JFET is presented, which is intended to be implemented on a automatic test system configured with GP—IB.
新型直流固态继电器是一种以新型器件IGBT以及功率场效应管为核心的，全部由固态电子器件组成的新型无触点开关器件。
The new type DC solid state relay is a kind of new contactless switching device, with the new type IGBT and power field effect tube as the core and composed completely by solid state electron devices.
列举和分析了单二极管型、二极管对型和单场效应管型线性化器的工作原理和实际应用价值，发现其都具有不便于调整的缺点。
It lists and analyzes the operating principle and application of the single diode, double diode and single GaAs FET linearer and finds that they are all inconvenient to be adjusted.
在建立了MOS场效应管小信号模型的基础上，采用信号流图的方法设计了一个三输入一输出的二阶通用有源电流模式滤波器。
By signal flow graph, a new universal active current mode second-order filter was designed basis on establishing MOS transistor small-signal model. The filter is of three-input and one-output.
因增益与带漏电流和功耗成比例，一个最小漏电流会在MOS场效应管振荡放大器元件能够提供适当的增益用于振荡的时候出现。
Thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a MOSFET oscillator amplifier element supplies adequate gain for oscillation.
因增益与带漏电流和功耗成比例，一个最小漏电流会在MOS场效应管振荡放大器元件能够提供适当的增益用于振荡的时候出现。
Thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a MOSFET oscillator amplifier element supplies adequate gain for oscillation.
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