理论推导了扩散电流与液选的模型方程，得到了解析解。
Model equations of diffusion electric currents and liquid rates were established theoretically and solved analytically.
介质充气后氧的极限扩散电流密度增大，对材料的侵蚀性增强。
The aggressiveness ofaerated solution accreted by increasing the limit diffusion current density of oxygen.
通过理论分析得到扩散电流和产生复合电流是实验芯片的主要电流机制；
Theoretical analyses show that the main current mechanisms of the diodes are diffusion current and gr current.
运用半导体的PN结扩散电流与电压关系特性，精确地测量了玻尔兹曼常数。
Based on the relationship between the diffusion current and voltage of PN junction, the Boltzmann's constant is measured with high accuracy.
引起极限扩散电流密度明显增加的临界磁场强度随三价铁离子浓度增加而减小。
The minimum magnetic field intensity needed to induce significant effect on cathodic limiting diffusion current density decreased with increasing ferric ion concentration.
在不使用运算放大器的情况下，直接利用晶体三极管与数字式电流表测出扩散电流，可以得到较为准确的玻尔兹曼常量。
The diffusion current is measured using transistor and digital ammeter instead of operational amplifiers, and the Boltzmann constant is obtained accurately.
我们有力量让电流通过我们-使用我们-或者拒绝被使用并且允许黑暗扩散。
We have the power to let the current pass through us - to use us - or refuse to be used and allow darkness to spread.
这可导致粒子的速度扩散、动电流及波的吸收。
The velocity diffusion current drive and wave absorption will result.
不考虑空气系统的时间滞后，影响电池动态响应时间的主要因素为扩散浓差极化，它限制了电流的变化率。
Regardless of hysteresis of air system, the main factor that influences dynamic response of fuel cell is diffusion concentration polarization, which restricts the change rate of stack current.
超微电极测试技术作为一种重要的测试技术，在超微电极上扩散速度快，电极表面电流密度高，测定的信噪比高，从而可提高测定的灵敏度。
The ultramicroelectrode possesses many advantages, such as rapid diffusing speed, high electrical current density, high signal-to-noise, accordingly, it can help to improve the detection sensitivity.
结果表明：充电和放电时交换电流及扩散系数变化不同。
The result shows that the change of the exchange current and lithium-ion diffusion coefficient is different in the charge and discharge process.
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
High leakage currents and soft reverse current-voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix.
电极的峰电流与扫描速度的平方根成正比，电极上的传质过程受扩散控制，对酶催化反应的动力学机制进行了探讨。
The peak current is proportional to square root of scan rate, which indicated that the procedure is controlled by diffusion. The dynamic mechanism of the enzyme catalyzed reaction was discussed.
讨论了质子交换膜燃料电池运行电流密度和温度、阴极和阳极加湿温度、气体扩散层孔隙率等参数对以上结果的影响。
The effect of the current density and fuel cell temperature, humidified temperature of cathode and anode, porosity of porous diffusion layer on the results mentioned above are discussed.
慢极化弛豫机构来源于空间电荷和缺陷的扩散，宏观表现为吸收电流，用时域微分谱可解释这一结果。
The mechanisms of slow polarize relaxation come from the diffuse of space charges and traps, it is absorption current in the macroscopic.
本文讨论了微带电极的计时电流、扩散层与时间的关系；
The relationships of chronoamperometric current and diffusion layer with electrolysis time are discussed at microband electrode.
以较高的灵敏度和抗干扰能力测得了扩散型真空电弧的弧后电流值；
It is suitable for diffused vacuum arcs and of fairly high sensitivity and good anti-interference ability.
研究了微带阵列电极的扩散层交叠情况及其对计时电流的影响；
The overlap between diffusion layer of microband electrode array and its effect on chronoamperometric current were studied, and the shielding effect on microband-array electrode is discussed.
结果表明，高能电子径向扩散将使驱动电流分布变平和展宽，同时驱动电流减小。
It is shown that the radial diffusion of fast electrons leads both to a broadening of the driven current profile and to a reduction of the total driven current.
分析了不同电源条件下的弧后电流。文中指出，扩散型真空电弧的分断极限是由电击穿决定的，而不由弧后电流引起的热击穿所定。
It has also been found that diffused vacuum arcs with a high current gives a low post-arc current and that the limitation to the breaking capacity for dif…
应用改进后的程序详细计算了不同径向扩散系数对低杂波电流驱动剖面分布的影响。
The modified code is used to calculate the radial diffusion effect on the lower hybrid current drive (LHCD) profile.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
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