采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
采用掺硼金刚石膜电极（BDD）电化学氧化的方法提高2-氯苯酚废水的可生化性，与钛基钌铱氧化物电极（DSA）进行对比，研究了该方法的机理。
Electrochemical oxidation on boron-doped diamond (BDD) anode was used as pretreatment for 2-chlorophenol wastewater to improve its biodegradability, using DSA electrode as a comparison.
本文在分析了电火花加工半导体材料去除速率的基础上，通过掺硼对CVD金刚石厚膜进行半导体改性，继而实现了其电火花加工。
On the basis of analyzing the semiconducting material removal rate of EDM and making semiconductive modification for CVD diamond thick film by boron-doping, EDM of the thick diamond film was realized.
利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态。
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR).
利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态。
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR).
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