掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
在相同泵浦条件下，钕离子掺杂质量分数为0 5%的掺钕钒酸钇晶体中截面处的温升大于其他掺杂质量分数的晶体的相应温升。
With the same pump conditions, the medial section temperature raise of 0.5%(mass fraction) Nd-ion doped neodymium-doped yttrium orthovanadate crystal is higher than other doped quality index.
控制施主浓度和掺杂等电子杂质，可以获得低吸收锗窗。
Germanium window with low absorption will be obtained through controlling donor concentration and doping isoelectronic im purity.
本文介绍用激光掺杂技术在高阻硅中掺入杂质来制造核辐射结型探测器的方法。
In this paper fabrication of nuclear radiation detectors by using laser-doping technique is reported.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。
A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
随着掺杂浓度的增加，中性杂质散射作用增强。
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
激光掺杂存在一个阈值能量密度。掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关。
It is found that there is a threshold energy density in laser doping, and distributions of dopant density and depth have relation to preheat temperature and plating layer thickness of the impurities.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
多普勒增宽谱的结果表明，不同杂质元素掺杂的金刚石薄膜，其中使正电子湮没的缺陷种类是相同的；
The results show that the defects annihilating the positrons is almost the same in various doped films, and the interactions between the dopants and the positrons are not distinct.
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
氮化硅可以通过适当掺杂引入杂质能级，用于制造量子阱获得蓝光激光。
Silicon nitride can be used to grow quantum well for obtaining blue laser by dopanting.
运用光在分层介质中传播的特征矩阵方法，通过数值计算，研究了掺杂一维光子晶体中光子禁带及杂质模的特性随不同偏振光及入射角的变化。
The characteristics of photonic forbidden band and impurity mode in doped one-dimensional photonic crystal were investigated by numeral simulated calculation with the method of characteristic matrix.
就现行P型杂质扩散工艺的不足，进行了开旮铝镓掺杂技术的研究。
Taking account of the disadvantage of current P-type impurity diffusion technology, an open tube gallium-aluminium diffusion technology is investigated.
多晶硅化金属层设置于杂质掺杂多晶硅层上，而多晶硅化金属层与多晶硅层可作为字线。
A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.
杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
磁掺杂在许多材料中普遍的存在，磁性材料中杂质的存在对系统物性的变化产生很大的影响。
The magnetic dilution was found to be existed universally in many materials. The dilutions of magnetic materials have an important effect on the properties of system.
可减少轻掺杂区中的杂质在形成侧墙的过程中发生扩散。
The diffusion of the impurities in the light doped region can be reduced in the process of forming the side wall.
通过对电子结构的分析，发现杂质能级的深浅与掺杂元素原子序数有关。
It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.
通过对电子结构的分析，发现杂质能级的深浅与掺杂元素原子序数有关。
It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.
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