此外，xml化还将Prop 2xlf转变成纯粹的XSLT体系结构(也就是说不掺杂其他转换方法)，从而降低了技术上的复杂性。
In addition, XMLizing also converts Prop2XLF to a pure (that is, not mixed with other transformation methods) XSLT architecture, which lowers the technical complexity.
在合适的材料中，使用X射线来控制掺杂剂原子的状态，用这种方法将使制作超导电路成为可能。
It could be possible to make superconductor-based circuits simply by using a beam of X-rays to control the positions of dopant atoms within a suitable material.
这就意味着这种基于特定api的方法不得不掺杂一定数量的DOM处理。
This means that the specialized API approach has to be combined with a certain amount of DOM processing.
我知道这多少是赢得一场比赛的方法。就像这个。尽管我已经得到在德比中的一些掺杂的东西。
I know how much it means to win a game like this, although I've had some mixed results in derbies.
比较了不同掺杂方法对超导体结构以及性能的影响。
The influence of different doping methods on the superconductivity and structure of BSCCO superconductor was investigated.
该实验方法说明，利用脉冲激光与金属掺杂靶相互作用沉积梯度金属薄膜是可行的。
This experimental method indicates that it is feasible to deposit functional gradient metal thin films by means of the interaction between pulsed laser and metal doping target.
采用电化学方法，以高氯酸为掺杂剂，合成了具有较好导电性能和机械性能的聚苯胺自支撑膜。
In this paper the polyaniline free standing film with better electric conductivity and mechanical properties was prepared by electrochemical method and doping with perchloric acid.
用EHMACC方法计算了酞菁铜本征态和碘掺杂态的能带结构。
The energy band structures of nickel phthalocyanine instrinctive state and iodine doped state were calculated by the EHMACC method.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
本文通过激光辐照的方法，研究了在高温合金试样表面掺杂Y_2O_3质点的可能性、均匀程度与激光辐照参数的关系。
Possibility to dope Y2O3 particle on the surface of superalloy sample and the relationship between homogeneity and irradiation parameters of laser have been investigated by means of laser irradiation.
该方法也包括执行第二注入工艺以便在硅层中注入附加的第二类型掺杂剂。
The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer.
管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
本文提出了一种新的半导体掺杂方法。
A new method for impurity doping of semiconductor has been developed.
采用电镜、能谱、X射线衍射分析、粒度分析等方法研究了掺杂钨粉的粒度及稀土元素的分布。
The particle size of doped tungsten and distribution of rare earth were studied by means of SEM, EDS, XRD and granularity analysis.
公开了一种在单晶硅生长过程中使用的掺杂硅熔体的制备方法。
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed.
一种新的冷发射电子束掺杂方法已研究成功。
A new method for doping by cold emitting electrons beam has been developed.
本文讨论半导体掺杂薄层的数据特性和质量管理方法。
This paper describes the data character of semiconductor dopants and the quality control method.
以硼掺杂金刚石薄膜（BDD）为电极，采用电化学氧化的方法对含氯酚废水进行实验研究。
The electrochemical oxidation of wastewater containing chlorophenols was investigated experimentally using synthetic boron-doped diamond(BDD) thin film electrodes.
目前解决该问题采用最多的方法是阳离子掺杂，但是该方法总是以降低材料的初始容量为代价，所以阳离子掺杂方法仍待改进。
Through the most widely adopted method to overcome the problems was cation substitution, the improvement on cyclability was at the cost of initial capacity, so the method need to be made better.
本发明涉及一种氮掺杂多孔碳材料的制备方法，属于无机纳米材料及电化 学领域。
The invention relates to a method of preparing a nitrogen-doped porous carbon material, and belongs to the field of inorganic nanometer materials and electrochemistry.
本文对用不同方法制备的YBCO和BSCCO陶瓷掺杂样品的物相和电阻特性进行了分析、比较。
This paper analyzed and compared the crystal phases and resistance-temperature properties of doped YBCO and BSCCO ceramic samples.
提出和设计了一种新颖的荧光探测方法，获得了不同掺杂浓度晶体的荧光光谱，实验结果与理论分析一致。
By using a novel fluorescence detection way, we measured the fluorescence spectra of crystals with different doping concentration. The experimental results is in consistent with theoretical analyse.
采用X射线光电子能谱(XPS)方法对不同反应体系下化学合成的聚苯胺(PANI)的结构和掺杂状况进行了研究。
The structure and protonation level of conductive polyaniline (PANI) chemically synthesized in different reactive systems have been investigated using X-ray photoelectron spectroscopy (XPS).
运用光在分层介质中传播的特征矩阵方法，通过数值计算，研究了掺杂一维光子晶体中光子禁带及杂质模的特性随不同偏振光及入射角的变化。
The characteristics of photonic forbidden band and impurity mode in doped one-dimensional photonic crystal were investigated by numeral simulated calculation with the method of characteristic matrix.
本发明属于化工技术领域，具体涉及一种具有光电活性的碳掺杂纳米二氧化钛薄膜的制备方法。
The invention relates to a manufacturing method for carbon doping nanometer titanium dioxide film with photo-electricity activity.
钛酸钡粉体的制备方法及掺杂方式对陶瓷的电学性质有很大影响。
The preparation and doping method influences the electrical properties of barium titanate strongly.
本发明公布了微波辐照制备钛硅化合物及其掺杂材料的方法。
The invention discloses a method for preparing Ti-Si compound under microwave irradiation and dopant material thereof.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
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