检测扩散结深和掺杂浓度。
存在并给出对应强吸收峰的最佳掺杂浓度。
Gain the best concentration of doping corresponding to the strongest absorption peak.
有一个最佳的掺杂浓度。
随着掺杂浓度的增加，中性杂质散射作用增强。
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
掺杂材料随着掺杂浓度的提高，放电比容量降低；
With the increasing of doping concentration, the discharge specific capacity decrease.
交替掺杂形态区域包含高低掺杂浓度的交替区域。
The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
随着掺杂浓度的增加，体系在低温区由金属向绝缘体转变。
The system turns from metal to insulator at lower temperatures with Cu concentration increasing.
结果表明荧光俘获效应随样品厚度和掺杂浓度的增加而增大。
It was found that the effect of radiation trapping increases remarkably with the concentration and thickness of Yb 3 + -doped phosphate glasses.
文章同时比较了几种不同PVK掺杂浓度对于器件性能的影响。
The effect of different ratios of PVK on the device characteristics is also studied.
随着掺杂浓度的增大，该体系逐渐从半导体特性向导体方向转变。
When doping concentration is increased, the system turns its semiconductor into conducting characteristics.
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
本文探讨了不同掺杂浓度下，EDTA对KDP晶体光学性质的影响。
Effect of EDTA on optical properties of KDP at different concentration was reported in this paper.
采用重掺锌母合金作掺杂剂，可减少锌的损失，较好地控制掺杂浓度。
Heavily doped zinc GaSb alloy was used as dopant to reduce the zinc volatile loss and control the concentrations of zinc more easily.
包覆层的厚度和掺杂浓度，以及基底的成分都能显著地影响表面电子态。
The influence of the thickness and concentration of the cap layer, as well as the component of the substrate, on the surface states is also obvious.
根据激光晶体掺杂浓度与泵浦光吸收之间的关系得出了阶梯掺杂晶体模型。
According to the relationship between the crystal doping concentration and the laser pump light absorption, gives the ladder doped crystal.
不同型号的晶体管的V_F不同是由于掺杂浓度不同导致的禁带宽度不同。
The difference of V_F of different transistors is because of the difference of band gap caused by the difference of the doping concentration.
氧空位、缺陷缔合和固深度均对样品的质子电导率与掺杂浓度有一定影响。
The non-linear relationship between proton conductivity and Y3+ content of sample is closely related with the oxygen vacancy, the defect association and the solid solubility of Y.
还对不同掺杂离子和不同掺杂浓度对拉曼谱的影响及其拉曼截面进行了一些分析。
The influence by different dope-ion and different doped concentration and the Raman cross section are also discussed.
并且，随着温度的升高交换偏置的最大值所对应的掺杂浓度向浓度低的方向移动。
Besides, the maximum of the exchange bias occurs at lower concentration for the higher temperature.
并且，随着温度的升高交换偏置的最大值所对应的掺杂浓度向浓度低的方向移动。
Besides, the maximum of the exchange bias occurs at lower concentration for higher temperature.
磁致电阻率的比值随磁场的增大而增大，并且它随掺杂浓度的增加迁移到更低的温度处。
Magnetic resistance increases with the applying field, further more, with the doping increasing, the maximum of magnetic resistance shifts to lower temperature regime.
激光掺杂存在一个阈值能量密度。掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关。
It is found that there is a threshold energy density in laser doping, and distributions of dopant density and depth have relation to preheat temperature and plating layer thickness of the impurities.
这些样品本身对X射线的吸收系数及掺杂浓度不一样，因此它们的光发射效率也有所差别。
In addition, the absorption coefficients and the dopant concentration doped of these samples weren't the same for X-ray excitation, therefore, their light emission efficiencies were also different.
本文报道了导电聚合物p3mt的荧光光谱及其随样品掺杂浓度、激光强度和温度的变化。
The photoluminescence spectra of conducting polymer P3MT with different doping densities at different excitation intensities and temperatures are reported.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
利用本发明的方法，通过外延层的掺杂浓度来调节以增加耗尽区的展宽，可进一步提高光子吸收效率。
By utilizing the method, the doping concentration of the epitaxial layer is regulated to increase the widening of the depletion region so as to further improve the photon absorption efficiency.
这些结果会对在较宽频率和较大掺杂浓度下构造声子热传导公式有帮助，同时有利于开展下一步工作。
These results could be helpful both for formulizing the phonon thermal conductivity in a wider frequency region including non dispersive and dispersive phonon and for performing our further work.
这些结果会对在较宽频率和较大掺杂浓度下构造声子热传导公式有帮助，同时有利于开展下一步工作。
These results could be helpful both for formulizing the phonon thermal conductivity in a wider frequency region including non dispersive and dispersive phonon and for performing our further work.
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