对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。
The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
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