“通过设计掺杂物的性质，形状和密度，你可以获得一些，在整体性质上，在自然界中不同寻常而且难以得到的东西。”Engheta说。
"By designing the properties of the inclusions, as well as their shapes and density, you achieve in the bulk property something that may be unusual and not readily available in nature," Engheta said.
激光掺杂存在一个阈值能量密度。掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关。
It is found that there is a threshold energy density in laser doping, and distributions of dopant density and depth have relation to preheat temperature and plating layer thickness of the impurities.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
掺杂能激发电荷密度波，从而削弱了自旋密度波，最终不利于铁磁态的稳定。
Doping can excite a charge density wave weakening the spin density wave against the stability of the ferromagnetic state.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
根据DIL分析确定不同物质掺杂钛酸锶的最佳烧结温度，采用排水法测定了试样的烧结密度；
The optimal sintering temperature of SrTiO3 doped with different substances was investigated based on DIL analysis. Density of samples was measured by the Archimedes principle.
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
本文介绍作者发现在固体电解质中掺杂专属的铁氧体，制成电池中的隔膜，能使电池放电电流密度大幅度提高。
The author states in this article his discovery that cell diaphragms made of solid electrolytes mixed with metallic ferrites, can have their discharge current densities increased by big margins.
分析讨论了晶体结构，电子能带，态密度和光学性质与掺杂元素种类和掺杂量之间的关系。
The electronic bands, density of states and optical properties are obtained accordingly, and the doping-effects on the electrical and optical properties also are analysed.
运用密度泛函平面波赝势方法（PWP）和广义梯度近似（GGA），对替代式掺杂钒（V）的闪锌矿（ZnS）的超晶胞电子结构进行了计算。
The optical properties and electrical structure of V in ZnS supercell have been computed by means of plane wave pseudo-potential method(PWP) with generalized gradient approximation(GGA).
运用密度泛函平面波赝势方法（PWP）和广义梯度近似（GGA），对替代式掺杂钒（V）的闪锌矿（ZnS）的超晶胞电子结构进行了计算。
The optical properties and electrical structure of V in ZnS supercell have been computed by means of plane wave pseudo-potential method(PWP) with generalized gradient approximation(GGA).
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