本文提出的中子掺杂硅单晶旋转辐照模型，给出了热中子通量在硅断面上的分布．平均值和不均匀度。
The rotating irradiation model for ND silicon presented in this paper gives distribution, mean value and heterogeneity of the thermal flux on the cross section of silicon.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
利用降温法生长掺尿素的UTGS单晶，测试了晶体的热释电和介电特性。结果表明，尿素的掺杂提高了晶体的热释电性能。
TGS crystals doped with urea have been grown from aqueous solution. The pyroelectric properties of UTGS crystals are determined. The results show that UTGS has better pyroelectric properties.
主要介绍探测器级特高阻区熔硅单晶的高精度微量中子嬗变掺杂技术。
The technique of high precision trace neutron transmutation doping of detector grade high resistance zone-refined Si mono-crystal is introduced.
公开了一种在单晶硅生长过程中使用的掺杂硅熔体的制备方法。
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
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