本发明对底电极的修饰采用沟道半导体材料本身,减小了电极与沟道材料之间的接触电势差。
The channel semi-conductor material is adopted to adorn the bottom electrode, so the contact potential difference between the electrode and the channel material can be reduced.
本发明对底电极的修饰采用沟道半导体材料本身,减小了电极与沟道材料之间的接触电势差。
The channel semi-conductor material is adopted to adorn the bottom electrode, so the contact potential difference between the electrode and the channel material can be reduced.
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