• 本发明对电极修饰采用沟道半导体材料本身,减小了电极沟道材料之间接触电势差

    The channel semi-conductor material is adopted to adorn the bottom electrode, so the contact potential difference between the electrode and the channel material can be reduced.

    youdao

  • 本发明对电极修饰采用沟道半导体材料本身,减小了电极沟道材料之间接触电势差

    The channel semi-conductor material is adopted to adorn the bottom electrode, so the contact potential difference between the electrode and the channel material can be reduced.

    youdao

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