认为电极与材料的接触势垒和材料内部空间电荷影响着材料的电致发光特性。
It is primarily considered that, the contact barrier between electrode and material and the space charges inside polymers greatly affect their el characteristics.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Schottky barrier diodes with different metal on III nitride have been fabricated.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
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