铁电阵列在红外探测器、非挥发性存储器中具有重要应用。
Ferroelectric arrays have promising applications in the infrared detectors and non-volatile ferroelectric memories.
在各种新型非挥发性存储器中，阻变存储器(RRAM)具有成为下一代存储器的潜力。
Resistive random access memory (RRAM) is one of the most promising candidates for next generation of non-volatile memory.
论文从系统级、模块级、电路级和物理级对非挥发性存储器芯片设计中的关键设计技术进行了研究。
In this paper, we design this non-volatile memory chip in system level, module level, circuit level and physical level.
通过这种方法制备的胶体金量子点浮置栅MOS结构可以在非挥发性存储器研究方面展现巨大的应用前景。
The present results indicate that this technique is promising for the efficient formation of metal nanoparticles inside MOS structures.
通过这种方法制备的胶体金量子点浮置栅MOS结构可以在非挥发性存储器研究方面展现巨大的应用前景。
The present results indicate that this technique is promising for the efficient formation of metal nanoparticles inside MOS structures.
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