双重扩散漏极结构层用以作为一高压电容的下电极板。
The two-step diffusion drain electrode structural layer is used for serving as a lower electrode plate of a high-voltage capacitor.
高压电容结构包括双重扩散漏极结构层、氧化层及多晶硅层。
The high-voltage capacitor structure comprises a two-step diffusion drain electrode structural layer, an oxide layer and a polycrystalline silicon layer.
氧化层是形成于双重扩散漏极结构层上，且氧化层完全重叠于双重扩散漏极结 构层上。
The oxide layer is formed on the two-step diffusion drain electrode structural layer and completely superposed on the two-step diffusion drain electrode structural layer.
氧化层是形成于双重扩散漏极结构层上，且氧化层完全重叠于双重扩散漏极结 构层上。
The oxide layer is formed on the two-step diffusion drain electrode structural layer and completely superposed on the two-step diffusion drain electrode structural layer.
应用推荐