本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本文介绍两步硼扩散工艺，它对改善台面功率晶体管的性能极有帮助。
This paper introduces two steps B-diffusion technology, rt is very helpful to improve the properties of mesa power transistors.
场效应晶体管，特别是双扩散场效应晶体管，及其制造方法。
Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
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