把双感应测井和浅电阻率测井或者微电阻率测井组合，假定为台阶状电性剖面条件下，可以校正侵入对深感应的影响。
If the dual-induction log is combined with a shallow laterolog or microresistivity log, it is possible to correct for the effect on invasion on the deep log, assuming a step profile.
把双感应测井和浅电阻率测井或者微电阻率测井组合，假定为台阶状电性剖面条件下，可以校正侵入对深感应的影响。
If the dual-induction log is combined with a shallow laterolog or microresistivity log, it is possible to correct for the effect on invasion on the deep log, assuming a step profile.
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