介绍了半导体器件与电路的总剂量辐射效应及其测试技术。
The measurements of total dose effects of electronic devices and circuits are presented in this paper.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
结论棉纤维素存在辐射后效应，且辐射的总效应与吸收剂量的对数呈线性关系。
Conclusion Cotton cellulose has radiation aftereffect, and there is a linear relationship between the logarithm of absorption doses and the total effect.
空间辐射环境能够引起半导体集成电路发生的总剂量效应、单粒子效应等辐射效应，可以被用来进行空间辐射环境监测。
Radiation effects in si ICs, such as total dose effect, single event effect, et al., can be utilized to measure space radiation environment.
空间辐射环境能够引起半导体集成电路发生的总剂量效应、单粒子效应等辐射效应，可以被用来进行空间辐射环境监测。
Radiation effects in si ICs, such as total dose effect, single event effect, et al., can be utilized to measure space radiation environment.
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