而微空洞释氢则第二阶段多于第一阶段。
In the first cracking stage grain boundary released more hydrogen than in the second stage.
结果表明正电子会被锌空位和微空洞缺陷捕获。
It is found that positron at the grass - boundary can be trapped by zinc vacancies and vacancy defect.
对三种不同热处理(正火、退火、球化)的低碳钢中微空洞的形成进行了一些观测。
Some observations of voids formation were carried out by using low carbon steel with three kinds of heat-treatment, namely, normalizing, annealing and spheroidizing.
这些缺陷被简化成微空洞或微裂纹等。它们的位置、方位以及尺寸等都是一些随机参量。
These defects are composed of cavities and microcracks, whose locations, orientation and size are random variables.
在观测和计算的基础上，对微空洞的形核率和长大率与塑性应变的关系进行了分析和讨论。
Based on these observations and computations, some analytical results have been made to show strain dependency of voids nucleation rate and voids growth rate.
本文用非平衡统计的概念和方法探讨了各种断裂过程中的共同问题——微裂纹或微空洞的演化。
The general problem in various fracture processes microcracks or voids evolution has been investigated by employing non-equilibrium statistical concept and method.
重点论述了前向兼容与后向兼容、锡须、空洞与微空洞、可焊性涂层以及如何避免无铅转移中出现的问题。
The forward compatibility backward compatibility tin whisker voids micro-voids and surface finishes were emphasized and how to avoid the lead free transfer problems were reviewed.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
综述了铜在芯片微刻槽中电沉积填充的过程、机理 ，并着重讨论了实现无裂缝和无空洞理想填充的主要因素—镀液的组成和添加剂的影响。
The procedure and mechanism of copper filling in the trench of the chip are reviewed, the effect of electrolyte components and additives on superfilling are discussed.
综述了铜在芯片微刻槽中电沉积填充的过程、机理 ，并着重讨论了实现无裂缝和无空洞理想填充的主要因素—镀液的组成和添加剂的影响。
The procedure and mechanism of copper filling in the trench of the chip are reviewed, the effect of electrolyte components and additives on superfilling are discussed.
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