此技术可应用于微电子器件的生产。
This technology can be adopted in the manufacture of microelectronic devices.
阴极是真空微电子器件的核心部件之一。
Cathode is one of the core components of vacuum microelectronic devices.
内引线连接是微电子器件制造过程中的重要环节之一。
Chip interconnection is an important part in the microelectronics parts manufacture process.
因此对微电子器件的温度特性的研究有着重要实际意义。
So it is valuable to research the high temperature characteristic of microelectronics devices.
介绍了新型微电子器件自旋晶体管和自旋阀晶体管的工作原理。
The principle of the new microelectronic devices, spin transistor and spin valve transistor is reviewed.
本文介绍了真空微电子器件场发射金属尖阵列阴极的制备工艺技术。
This paper describes a fabrication technology of metal tip field emission arrays (FEA) for the vacuum microelectronic devices.
展望了透明导电聚苯胺薄膜在光电器件和微电子器件领域的应用前景。
The application prospect of the transparent and conducting polyaniline films in optoelectronic and microelectronic devices is forecasted.
研究了低电压的静电放电(esd)对微电子器件造成的潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
研究了低电压的静电放电(esd)对微电子器件造成的事件相关潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
半导体物理学是凝聚态物理学的一个重要分支，也是现代微电子器件工艺学的理论核心。
Semiconductor physics is recognized as one of the major areas of condensed matter physics and the core of modern micro-electronics device technology.
本发明属于微电子器件和微加工方法，特别是涉及一种对电荷超敏感的库仑计及其制备方法。
The invention relates to a charge-super sensitive Coulomb meter and its preparation method that belongs to microelectronic device and micro-processing method.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
场发射阴极作为各种真空微电子器件的核心，其性能的好坏将直接决定着场发射器件的总体性能。
The whole performance of device depends on the capability of field emitting cold cathodes which act as the kernel of all kinds of vacuum micro-electronics device.
真空微电子器件相对于半导体器件来说，有着更高的工作频率和输出功率，正常工作温度范围也相对较大。
Compared with semiconductor devices, vacuum microelectronic devices can work with higher frequency and larger power at a wider range of temperature.
氢化硅薄膜由于在红外成像传感器、太阳能电池及薄膜晶体管等微电子器件中有着广泛应用前景而备受关注。
Hydrogenated silicon film attracts extensively attention due to its application on many kinds of microelectronic devices, such as infrared imaging system, solar cell and thin film transistor.
目前承担微电子专业方向的主干课程：固态电子论、微电子器件与原理、集成电路设计，微电子工艺等课程。
It has key courses of microelectronics: solid-state electronic theory, microelectronic devices and principles, integrated circuit design, micro-electronics processing, etc.
本文介绍了利用半导体硅材料制作的真空微电子器件的核心部件，场致发射硅锥阴极，的工艺研究及实验结果。
A process for the fabrication of Si cone cathode for the build up of vacuum microelectronic devices is proposed and its experimental results are given.
以场致发射理论为基础的真空微电子器件，因其具有功耗低、电流密度大、频率高等诸多优点而倍受人们关注。
Vacuum micro-electronics devices, which are based on field emission theory, are more and more widely applied, because of their low power consumption, high current density and high frequency.
动力学不稳定性模型被推广到有限几何形状的加热面，以解释微电子器件尺寸对池内沸腾换热临界热流形成机理的影响。
The hydrodynamic instability model is spread for finite geometries in order to explain effects of size of microelectronic devices on the mechanism of formation of pool boiling critical heat fluxes.
通过对序进应力加速寿命试验的研究，提出了一种快速评价微电子器件失效激活能的方法，建立了计算失效激活能的理论模型。
Basing on the study of progressive stress accelerated life test, a rapid evaluation method for electronic device's activation energy is proposed, and the theory model is constructed.
量子点中电子和空穴强的量子限制作用使其表现出一些新颖的物理性能，从而在微电子和光电子器件方面有着重要的应用价值。
Due to strong confinement effects of electrons and holes, QDs exhibit novel physical properties leading to important applications in microelectronics and optoelectronics.
量子点中电子和空穴强的量子限制作用使其表现出一些新颖的物理性能，从而在微电子和光电子器件方面有着重要的应用价值。
Due to strong confinement effects of electrons and holes, QDs exhibit novel physical properties leading to important applications in microelectronics and optoelectronics.
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