对硫化锌粉料、硫化锌半导体微晶薄膜进行了X射线光电子发射谱剖析。
On the basis of analysis on XPS (X-ray photoelectron spectroscopy) technique the information on electron states of ZnS powder, ZnS thin film surface and internal layer is obtained.
对有机硅橡胶进行表面改性，可以通过在其表面上形成羟基磷灰石(简称HA)微晶薄膜来实现。
The surface modification of organic silicon rubber could be maintained by forming hydroxyapatite (abbreviation HA) crystallite film on its surface.
本文用仿生合成法，对HA微晶薄膜形成的条件及实验方法进行了研究，并讨论了此方法的实验机理。
Using biomimetic synthesis, the conditions and method of forming ha crystallite film were studied in this paper, and the trial mechanism was discussed.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用VHF-PECVD技术制备了不同衬底温度的微晶硅薄膜样品。
Series of microcrystalline silicon thin films were fabricated by VHF-PECVD at different substrate temperatures (Ts).
实现高速沉积对于薄膜微晶硅太阳电池产业化降低成本是一个重要手段。
To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells.
结果表明：薄膜由非晶硅结构转变为微晶硅结构，微晶硅晶粒尺寸在纳米级。
The results indicate that the amorphous film gradually transfers into microcrystalline Si, and the grain size is nanometer order of magnitude.
另外，薄膜硅技术也被开发出来，将非晶硅或者微晶硅薄膜放到玻璃那样的平的大面积衬底上。
Besides, thin-film silicon technologies have also been developed to place a thin film of amorphous or microcrystalline silicon onto flat large-area substrates such as glass.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
本文对VHFPECVD制备的本征微晶硅薄膜和电池进行了电学特性和结构特性方面的测试分析研究。
The electrical and structural properties of microcrystalline silicon thin film and solar cells fabricated by VHF-PECVD were studied.
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
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