所述腐蚀性气体通路可为异质衬底基座杆内形成的中空内腔，该中空内腔和氮化物生长反应腔通过异质衬底隔开。
The paths of the corrosive gas can be a hollow cavity formed in the foreign substrate base bar, the hollow cavity and the nitride reacting chamber are separated by the foreign substrates.
一种方法，其使用纳米结构柔性层，利用HVPE在异质衬底(10)上生长高质量的平且厚的化合物半导体(15)。
A method utilizes HVPE to grow high quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure compliant layers.
一种方法，其使用纳米结构柔性层，利用HVPE在异质衬底(10)上生长高质量的平且厚的化合物半导体(15)。
A method utilizes HVPE to grow high quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure compliant layers.
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