共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
为了设计以半导体异质结构量子点接触(QPC)为基础的器件，需要掌握QPC结构中静电势的分布及其控制方法。
In order to design the quantum point contact (QPC) devices based on the semiconductor heterostructure, electrostatic potential distribution and control methods of the QPC are needed to be considered.
为了设计以半导体异质结构量子点接触(QPC)为基础的器件，需要掌握QPC结构中静电势的分布及其控制方法。
In order to design the quantum point contact (QPC) devices based on the semiconductor heterostructure, electrostatic potential distribution and control methods of the QPC are needed to be considered.
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