随着保温时间的增加，异常晶粒长大所造成的晶粒不均匀程度逐渐降低。
With the increase of holding time during heating, grains tend to be uniform.
结果表明，晶粒异常长大的择优取向依赖于热处理温度及气氛。
The experimental results indicate: The preferred orientation of the abnormal grain growth depends on the annealing temperature and atmosphere sensitively.
特别是对于超细低钴硬质合金，WC晶粒将通过烧结颈产生异常长大。
Especially for superfine cemented carbide with low cobalt, crystalline grain unusually grows up through WC neck.
原始镍镀层的(111)和(200)面双织构在低温晶粒异常长大阶段仍存在，但在正常长大阶段逐渐消失。
The original (111) and (200) double fibre texture still exist at low temperature grain growth stage, but diminish gradually at normal grain growth stage.
选择15%及以上的变形量，可以避免晶粒异常长大，并获得均匀细小的晶粒组织。
AGG can be avoided and the uniform fine grains can be gained when the strain is not less than 15%.
选择15%及以上的变形量，可以避免晶粒异常长大，并获得均匀细小的晶粒组织。
AGG can be avoided and the uniform fine grains can be gained when the strain is not less than 15%.
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