这款产品将使用Intel第三代HKMG工艺，第五代硅应变技术，另外与32nm类似，22nm制程仍将继续使用193nm液浸式光刻技术。
It will also use copper interconnects, low-k, strain silicon and other features. Like 32-nm, Intel will make use of 193-nm immersion lithography.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
现代先进的外延技术使应变层锗硅材料的应用成为可能。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
现代先进的外延技术使应变层锗硅材料的应用成为可能。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
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