为了提高电容式触觉传感阵列的性能，本工作以SOI材料中异质结界面作为深槽腐蚀中腐蚀自停止界面，以提高硅膜片的表面平整度和厚度均匀性。
In order to improve the uniformity of the thin film of silicon, the interface of hetero-junction of SOI material was used as the interface of etch self-stopping.
为了提高电容式触觉传感阵列的性能，本工作以SOI材料中异质结界面作为深槽腐蚀中腐蚀自停止界面，以提高硅膜片的表面平整度和厚度均匀性。
In order to improve the uniformity of the thin film of silicon, the interface of hetero-junction of SOI material was used as the interface of etch self-stopping.
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