等离子体低温刻蚀是一种针对高深宽比结构的干法刻蚀技术。
High aspect ratio structures have been successfully fabricated by plasma cryo-etching on silicon wafers.
对硅的干法刻蚀技术是现代半导体工业中非常重要的一项工艺。
Dry etching technique of silicon is a very important process in the modern semiconductor industry.
硅片的一部分经掩膜后进行SF6干法刻蚀，从而使集流器能够连接到外电路上。
Part of the silicon layer was masked and dry etched with SF6 gas to allow connection of the current-collector to the outside circuit.
最后利用三维表面形貌仪，分别对湿法刻蚀和干法刻蚀的磁头结构进行了数据分析。
The etching parameters and the photos of the head slider were presented. 3D surface microstructures of the head sliders were analyzed by Vecco MHT-III interferometer.
目前，刻蚀技术已经成为集成电路生产中的标准技术，干法刻蚀设备亦成为关键设备。
Now etching has be-come the standard technology, and etching equipment is the key equipment in IC production.
传统的干法刻蚀不适合用于注入层，因为它的工艺复杂而且在刻蚀过程中可能导致基片损坏。
The feasibility of using traditional dry-etch BARCs is very questionable because they introduce more process complexity and more defectivity and potentially cause unnecessary substrate damage.
综述了亚微米、深亚微米干法刻蚀和相关技术的最新进展及其在超大规模集成电路制造中的应用。
The latest advance of the dry etching for submicron fabrication in ULSI production and interrelated technology are introduced.
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
通过光致发光(PL)特性表征发现，干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。
Photoluminescence (PL) measurements show that, the photoluminescence intensity of the quantum Wells is enhanced about 3 times after dry etching.
通过光致发光(PL)特性表征发现，干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。
Photoluminescence (PL) measurements show that, the photoluminescence intensity of the quantum Wells is enhanced about 3 times after dry etching.
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