当一个电子跃迁到传导带，它会在价带留下一个“凹陷”。
When an electron leaps into the conduction band, it leaves behind a hole in the valence band.
价带顶和导带底附近的带间跃迁振子强度大部分都近乎为零；
Most optical oscillator strengths for the transitions between valence band and conduction band are nearly equal to zero.
根据寿命数据提取的跃迁四极矩显示，在带交叉区发生形状变化。
The transition quadrupole moments extracted from the measured lifetimes demonstrate that change in nuclear shape o.
基于推转模型和粒子转子模型关于奇奇核二准粒子转动带磁偶极约化跃迁几率的描述，对稀土区双奇核的这一行为进行了讨论。
Such a phenomenon is discussed based on the formula of magnetic dipole reduced transition probability deduced from the Cranking Shell Model and Particle Rotor Model respectively.
文中讨论了带间跃迁与振子模型，光学性质与维度性之间的物理联系。
Relations between interband transitions and harmonic oscillator model, and between optical properties and dimensionality are discussed.
当压强超过某值后，第iii带强度发生了跃迁，蛋白质发生了明显的变性。
Above the specified pressure, the intensity of band III has a transition which suggests the protein is denatured.
化合物吸收可见光还可以发生电子从一个原子到另一个原子的跃迁而产生荷移吸收带发生电荷跃迁。
Visible light absorbing compounds can also occur from one electronic atom to another atom arising from the transition charge transfer absorption bands in charge transitions.
根据寿命数据提取的跃迁四极矩显示，在带交叉区发生形状变化。
The transition quadrupole moments extracted from the measured lifetimes demonstrate that change in nuclear shape occurs in the band crossing region.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
用有效质量方法计算了磁场下超晶格的子带结构和光跃迁。
Hole subbands and optical transitions of superlattices in magnetic field are calculated on the basis of the Luttinger-Kohn effective mass theory.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
重力区(藏的小行星带)在在死亡空间区域中定位，允许舰船跃迁到重力区的指定点。
Gravimetric sites (hidden asteroid belts) are no longer located within Deadspace zones, allowing ships to warp in to any designated point inside the site.
能量损失谱和有效电子密度的计算结果表明只有很少的价电子参与了带间跃迁。
The calculation results of the energy loss function and effective electronic density indicate that there are only few electrons taking part in the interband transition.
讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
三能级模型下跃迁通道分析表明，三能级偶极耦合增强不仅与B带激子跃迁态有关，还与CT态密切相关。
Transition three-level model channel analysis showed that three-level dipole coupled with enhanced not only with the B exciton transition state, but also closely related with the CT state.
次近邻跃迁和纳米带的尺寸越大，这种影响越显著。
The bigger value of next-nearest hopping and larger size of nanoribbons mean more marked such effect.
同时又利用最新的平衡振动常数计算了o_2~+的上下态rkr势，用rkr势的结果计算了四重态跃迁的不同振动带的frank-condon因子。
Furthermore the rkr potential curves of both the a and b quartet states of o_2~+ were derived based on the latest equilibrium constants and franck-condon factors were listed in this thesis as well.
同时又利用最新的平衡振动常数计算了o_2~+的上下态rkr势，用rkr势的结果计算了四重态跃迁的不同振动带的frank-condon因子。
Furthermore the rkr potential curves of both the a and b quartet states of o_2~+ were derived based on the latest equilibrium constants and franck-condon factors were listed in this thesis as well.
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