结果表明，晶格对称结构和空气孔形状对带隙大小有影响。
The results show that the lattice symmetry and the shapes of the air holes can affect band gap size.
同时得到了一些晶格参数使得次带隙得到抑制，而主带隙大小基本不变。
Some parameter ranges where the secondary gap can be suppressed while the primary gap is not identified.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
应用推荐