阐述了金属多层膜结构对巨磁电阻的影响。
The effect of metallic multilayer structure on GMR was discussed.
巨磁电阻材料的不同类型，描述了其特性；
巨磁电阻效应的发现开拓了磁电子学的新领域。
A new research field of magnetoelectronics has been developed since the discovery of giant magnetoresistance.
这次内容包括：（1）多层膜巨磁电阻材料；
The contents for 1998~1999 include: (1) multilayer giant magnetoresistance materials;
内容包括：（1）射频和超高频巨磁电阻抗材料；
The main contents of this review are: (1) giant magnetic impedance materials at radio frequencies and ultra- high frequencies;
巨磁电阻效应的发现者获得2007年诺贝尔物理学奖。
The discoverers of GMR have won the 2007 physics Nobel Prize.
纳米金属多层膜由于其巨磁电阻性能而受到人们的重视。
Nanometer multilayer metal films have been emphasized for their grand magnetic resistance.
巨磁电阻的产生是因为每一个电子带有一个特定方向的自旋。
GMR arises because each electron carries a spin that points in a specific direction.
巨磁电阻(GMR)材料可应用于弱磁场高灵敏度磁传感器。
Giant magnetoresistance (GMR) materials is applied to feebleness magnetic field sensor.
由于在信息存储技术中的应用潜力，人们对巨磁电阻效应发生了浓厚的兴趣。
Because of its application potential of GMR in information storage technology, it's very useful for us to develop GMR researches.
综述了金属多层膜巨磁电阻效应的研究现状、理论解释，并展望了其研究方向。
Current study and theoretical explanation of GMR of metallic multilayer were reviewed, and its study trends were prospected.
优化材料性能参数和自旋阀巨磁电阻磁头的结构参数是微磁器件实用化的关键。
Optimizing the materials properties and structure parameters of giant magneto resistance (GMR) spin valve head is of key importance to application.
本文介绍了各种磁性材料的巨磁电阻效应及其传感器的原理、结构、特性和应用。
This paper introduces an effect of gain magnetic resistance for multilayer magnetic films , as well as the principle, structure, characteristic and application of the GMR sensors.
介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。
This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.
阐述了一维磁纳米线在磁记录、巨磁电阻、量子磁盘及高密度存储等领域的应用前景。
The application prospects of magnetic nanowires for magnetic recording, giant magnetoresistance, quantum disk and magnetic memory were discussed.
用巨磁电阻（GMR）材料构成的磁电子学新器件，已成功地应用于计算机存储领域。
New magneto- electric components made from giant magnetoresistance(GMR)materials have been successfully applied to computer storage.
采用离子束溅射方法制备了正巨磁电阻多层膜，在制备过程中采用外加磁场和退火处理。
A series of giant positive magnetoresistance of magnetic multilayer structure were fabricated by ion-beam sputtering in high vacuum with applied magnetic field and treatment.
由于巨磁电阻效应在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。
Materials with giant magnetoresistance effect have been extensively studied because of their potential application in magnetic recording and sensors.
巨磁电阻效应位居当前凝聚态物理研究热点中的首位，因此得到了国内外研究人员的广泛重视。
The Giant Magneto-Pesistance (GMR) effect is the primary research direction of condensed matter physics, thus it attracts more and more attention of researchers.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
随着巨磁电阻效应(GMR)研究的广泛开展，方便、快速的磁电阻测试已成为研究GMR效应的基础。
With the increasing research on giant magnetoresistance (GMR), convenient and fast testing system has become the basis of research on GMR.
与偏压的影响相比，温度的改变所引起的巨磁电阻的变化相对较小，只有在温度变化较大时才有显著的影响。
Comparing to the influence of the bias, the variation of the giant-magnetoresistance induced by change of temperature is smaller.
由于磁场变化对普通金属只会造成远远不到百份之一的电阻变化，这种现象被称为“巨磁电阻”或巨磁阻gmr。
Since a magnetic field changes the resistance of ordinary metals by only a fraction of a percent, they dubbed this phenomenon "giant magnetoresistance," or GMR.
由于磁场变化对普通金属只会造成远远不到百份之一的电阻变化，这种现象被称为“巨磁电阻”或巨磁阻GMR。
Since a magnetic field changes the resistance of ordinary metals by only a fraction of a percent, they dubbed this phenomenon "giant magnetoresistance, " or GMR.
巨磁电阻(GMR)效应使这样一个驱动器的直径不到一英寸，检测在便携式电子设备中存储数据的微小的磁场。
The giant magnetoresistance (GMR) effect allows drives like this one, less than an inch in diameter, to detect the tiny magnetic fields that store data in portable electronic devices.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
概括介绍了金属软磁合金多层薄膜巨磁电阻效应和巨磁阻抗效应的研究和应用，对多层薄膜的制备方法和表征手段作了介绍。
The particular magnetic effects, which are the giant magnetoresistance effect and the magnetic relaxation effect, of the granular films at low temperature have been studied.
在以往的电子输运过程中，人们仅需要考虑电子作为电荷的载体，但在巨磁电阻效应中，电子不仅是电荷的载体，而且具有自旋。
We only need consider electron as carrier of electric charge in former electron transporting process, but in GMR effect, electron not only is the carrier of electric charge, but also has spin.
正如我们所知道的，自从在钙钛矿锰氧化物中发现巨磁电阻效应以来，有关它的研究已经成为当前强关联电子体系的一个研究热点。
As we know, the studies of perovskite manganite oxides have attracted much renewed attention in strongly correlated electron system since the discovery of colossal magnetoresistance (CMR) effect.
正如我们所知道的，自从在钙钛矿锰氧化物中发现巨磁电阻效应以来，有关它的研究已经成为当前强关联电子体系的一个研究热点。
As we know, the studies of perovskite manganite oxides have attracted much renewed attention in strongly correlated electron system since the discovery of colossal magnetoresistance (CMR) effect.
应用推荐