计算了二维无序系统的电子态密度、迁移率边界、局域化临界点以及直流电导率。
The local density of states (LDOS), the mobility edge, the localization critical value and the DE conductivity for two-dimensional disorder systems are calculated.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
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