本文提出了一种新的多晶硅发射区少数载流子注入理论。
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
应用推荐