本文提出了一种测量少数载流子寿命的方法。
In this paper showed a measurement method of minority carrier lifetime.
本文提出了一种新的多晶硅发射区少数载流子注入理论。
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
本文提出了一种新的测量半导体材料中少数载流子寿命的方法。
A new method for measuring the life time of minority current carriers in semiconductors is described.
其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。
The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.
最后，提出了通过测量暗电流输出来测量少数载流子寿命的方法，并给出了实验和计算的结果。
A method of measuring the minority carrier's life by measuring the output of the dark current is presented and experimental results obtained are given.
开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。
Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.
我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。
An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
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