用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。
Metal aluminum films were deposited on AAO templates by radio-frequency magnetron sputtering.
本文利用射频磁控溅射方法，在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。
Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.
采用射频磁控溅射技术在不同射频功率下沉积了ITO薄膜，并将其应用于HIT太阳电池。
ITO thin films were prepared by radio-frequency magnetron sputtering technique at different sputtering power, and applied to HIT solar cells.
在石英衬底上采用射频磁控溅射的方法制备高电阻azo薄膜，其中高电阻由高氧氩比环境得到。
High resistance AZO films are fabricated on quartz substrates by radiofrequency (RF) magnetron sputtering deposition method in the environment with high oxygen proportion.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射ptfe靶等离子体气氛的影响规律。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用射频磁控溅射法沉积了CN薄膜，利用XPS,XRD,FTIR等测试手段研究了CN薄膜的成分和结构。
CN films were deposited by radio frequency sputtering technique and the composition and structure of it were investigated by means of XPS, XRD and FTIR.
用RFMS-4射频磁控溅射仪制备纳米多层膜技术稳定可靠，在优化工艺条件下能保证薄膜成分和溅射速率的稳定性。
The concentration and deposition rate of the films are controllable with the optimization parameters on the RFMS-4 sputtering apparatus.
所有样品采用射频辅助磁控溅射方法制备。
All samples were prepared by rf magnetron sputtering method.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
应用推荐