结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.
在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.
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