结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
这个误差电压被用作是控制电荷泵导通电阻，进而获得了一个稳定的输出电压。
This error voltage serves as is controls the electric charge pump breakover resistance (to call that it controls resistance pressure), then obtained a stable output voltage.
它是特别设计，在电压下降到0V时整个开关元件，同时保持良好的速度和导通电阻特性。
It is specifically designed to operate at voltages down to 0v across the switch elements while maintaining good speed and on-resistance characteristics.
在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.
在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.
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