插座外壳包括利用金属屏蔽层进行金属化的不导电衬底。
The jack housing includes an electrically non-conductive substrate metallized with a metal shield layer.
光阴极由衬底(包括介质阴极的导电基底)和光电发射膜构成。
The photocathode consists of a substrate (involving a conductive base film for dielectric cathode) and a photoemission film.
所述第一导电类型的体区位于所述衬底内所述第一区域和所述第二区域之间。
A body region of the first conductivity type is in the substrate between the first region and the second region.
一层或多层中间导电层形成于顶部导电层和衬底之间。
The one or more intermediate conductive layers are formed between the top conductive layer and the substrate.
在柔性衬底上制作的器件具有重量轻、柔软等优点，所以柔性透明导电薄膜成为当前的研究热点。
Devices deposited on flexible substrates have some advantages such as weight-light, flexibility, etc. Therefore, flexible transparent conductive film has become a focus of research.
柔性衬底氧化物半导体透明导电薄膜的开发和应用将扩大TCO薄膜的应用领域。
The research and development of TCO films (including ITO films and AZO) prepared on flexible substrate will expand more applications.
包括N型体晶硅体颗粒（01），铝衬底 （02），中间绝缘层（05），表面透明导电层（06）和减反射层（07）构成。
The solar cell includes N-type crystalline silicon particles (01), aluminum substrate (02), middle insulating layer (05), surface transparent conductive layer (06) and antireflection layer (07).
本文采用射频辅助脉冲激光沉积(PLD)系统，在镀有透明导电膜氧化锡铟(ito)的玻璃衬底上制备了氧化锌薄膜。
Zinc oxide thin films were prepared by pulsed laser deposition (PLD) on glass substrates coated with tin-doped indium oxide (ITO) thin films in this paper.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
导电层通过粘合剂接合至载体衬底。
The conductive layer joins to a carrier substrate with an adhesive.
第一外延层被布置在衬底之上并且被掺杂为也具有第一导电类型。
The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
一种磁头包括直接在衬底上形成的晶片衬底和导电下层。
A magnetic head includes a wafer substrate and a conductive underlayer formed directly on the substrate.
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
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