对于大多数多孔硅，过高的退火温度可造成多孔硅的导带和价带边缘的量子漂移的改变。

To most of porous silicon, overhigh annealing temperature can result in quantum-drift change at the edge...

youdao

对于大多数多孔硅，过高的退火温度可造成多孔硅的导带和价带边缘的量子漂移的改变。

To most of porous silicon, overhigh annealing temperature can result in quantum-drift change at the edge...

youdao