本发明能使多叉指型MOSFET的各叉指同时开启导通，改善多叉指型MOSFET结构的静电保护性能。
The structure can make each interdigital of the multi-interdigital MOSFET simultaneously start conduction, and improve the static protective performance of the multi-interdigital MOSFET structure.
本发明能使多叉指型MOSFET的各叉指同时开启导通，改善多叉指型MOSFET结构的静电保护性能。
The structure can make each interdigital of the multi-interdigital MOSFET simultaneously start conduction, and improve the static protective performance of the multi-interdigital MOSFET structure.
应用推荐