在此基础上，通过分析整个级联型低噪声放大器的密勒效应对优化设计的影响，进一步提出了对共栅级MOSFET的沟道宽度优化的必要性。
Based on this, the article draws a conclusion that the optimizing channel width of common-source MOSFET is necessary by analyzing Miller effect of LNA.
在此基础上，通过分析整个级联型低噪声放大器的密勒效应对优化设计的影响，进一步提出了对共栅级MOSFET的沟道宽度优化的必要性。
Based on this, the article draws a conclusion that the optimizing channel width of common-source MOSFET is necessary by analyzing Miller effect of LNA.
应用推荐