分析了CMOS逻辑门电路在运行时的电流特征，阐明了集成电路中数据与电磁辐射的相关性，建立了寄存器级电磁信息泄漏汉明距离模型。

The result shows that EM information leakage exists in CMOS integrated circuit during work, XOR operation in each round of DES is an attack point.

youdao

分析了CMOS逻辑门电路在运行时的电流特征，阐明了集成电路中数据与电磁辐射的相关性，建立了寄存器级电磁信息泄漏汉明距离模型。

The result shows that EM information leakage exists in CMOS integrated circuit during work, XOR operation in each round of DES is an attack point.

youdao