在非易失性存储装置中，可以通过将擦除电压施加到位线或共源线来从存储晶体管擦除数据。
In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。
The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
在这里碳纳米管或者单有机分子替代了传统的半导体晶体管。我们发现新的晶体管能用做一个磁性存储器。
We work with a completely new transistor concept, in which a carbon nanotube or a single organic molecule takes the place of the traditional semi-conductor transistor.
正如惠普和诺基亚痛苦地知道，每个人最终以不同的方式得到相同的晶体管、相同的存储器、显示器和处理器。
As Hewlett-Packard and Nokia painfully know, everyone eventually has access to the same transistors, the same memory and displays and processors.
当该晶体管时完全饱和，能把一个电路打开或关闭，然后可用于控制一个电路的工作，或者将信息存储在一个电路。
The transistor, when fully saturated, could turn a circuit on or off, and then could be used to control an electrical circuit or store information in an electrical circuit.
解决这个问题——以便于让晶体管使用自身的非易失性半导体存储器—将会让所有的电脑运行速度更快。
Cracking this problem—so that transistors can act as their own non-volatile memory—would make all computers faster.
存取晶体管(54)耦合在每个存储节点(SN,snb)和写入位线(WWB0)之间，并且由写入字线(WWL0)控制。
An access transistor (54) is coupled between each storage node (SN, SNB) and a write bit line (WWB0) and controlled by a write word line (WWL0).
这就是说，电路并不在晶体管层次进行设计，而是在门电路、触发器和存储模块的级别进行设计的。
This means, that the circuit is not designed on the level of transistors , but on the level of gates, flips-flops.
有机薄膜晶体管（TFT）在数据存储、集成电路、传感器诸方面的广泛应用引起了人们极大的兴趣。
Thin film transistors (TFTs) using organic semiconductors as the active material are of interest for a number of applications such as data storage, integrated circuit and sensors.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
这个算式很简单：芯片上的晶体管越多，也就意味着微处理机的速度越快，存储芯片的容量越大。
That's an easy equation: More transistors on a chip equals faster microprocessors or larger-capacity memory chips.
晶体管不与GND连接地接地，从而简化该存储单元中的数据替换。
A transistor is grounded not connected to GND without connection, thereby simplifying the replacement of data in the memory cell.
该化合物可以用于电子器件，如有机薄膜晶体管(OTFT)，显示器件，发光二极管，光伏电池，光检测器和存储单元。
The compounds can be used in electronic devices such as organic thin film transistors (OTFTs), display devices, light-emitting diodes, photovoltaic cells, photo-detectors, and memory cells.
在一种可能的设计中，晶体管100、102、104和106每一者是存储器单元或元件。
In one possible design, transistors 100, 102, 104 and 106 are each memory cells or elements.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
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