通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理。
The generation mechanism of stress induced leakage current (SILC) in flash memory cell is studied by experiments.
还有一个挑战将是创造出一个有数百万而不是只有一个存储单元的电子存储器。
The next challenge will be to create an electronic memory that has millions of cells instead of just one.
如果一个存储单元能存放一个字节，则一个64kb的存储器共有存储单元数为B。
If a storage unit can store a byte, 64kb of memory is a Shared storage unit number for b.
为了在计算机的存储器中实现堆栈结构，习惯上保留一个足够大的连续的存储单元，以适应堆栈，因为它的生长和收缩。
To implement a stack structure in a computer's memory, it is customary to reserve a block of contiguous memory cells large enough to accommodate the stack as it grows and shrinks.
某些非晶体存储器中的一个存储单元。
同时，与普通电阻式随机存储器的存储单元相比，进一步简化了器件结构，并能提高器件的热稳定性。
At the same time, compared with the storage unit of an ordinary resistance type random memory, the invention further simplifies the device structure, and can improve the thermal stability of devices.
磁芯存储器的一种编排方式，其中编号最低的存储单元是编号最高的存储单元的后续。
An arrangement of core storage in which the lowest numbered storage location is the successor of the highest numbered one.
将客户端机器和存储单元的识别信息保存于存储器中。
The identification information of both the client machines and the storage units is saved in memory.
存储器采用六管CMOS存储单元、锁存器型敏感放大器和高速译码电路，以期达到最快的存取时间。
A fast access time is achieved by using six-transistor CMOS memory cell, latched sense amplifier, and high-speed decoder circuit.
存储器采用六管CMOS存储单元、锁存器型敏感放大器和高速译码电路，以期达到最快的存取时间。
A fast access time is achieved by using six-transistor CMOS memory cell, latched sense amplifier, and high-speed decoder circuit.
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