金属纳米晶存储器件具有低功耗、高速读写特性及较高的可靠性，因此近年来在非易失存储器研究领域备受关注。
In recent years, in the field of non-volatile memory research, metal nanocrystal memory with low-power, high-speed read and write characteristics and high reliability receives much attention.
动态随机存储器栅极侧壁硅化钨残留造成的短路成为制约提高产品良率及可靠性的瓶颈。
Dynamic random access memory (DRAM) suffers from the bridge issue due to the WSix residue on gate sidewall, which is the bottleneck to enhancing the product's yield and reliability.
研究了系统的程序指令集、逻辑堆栈和I/O存储器数据类型，实验表明系统具有良好的实时性和可靠性。
Program instruction set, logic stack and data type of I/O memory which are tied up with tasks in the soft-PLC system are analyzed and studied.
同步动态随机存储器SDRAM凭借其集成度高、功耗低、可靠性高、处理能力强等优势成为最佳选择。
SDRAM (Synchronous Dynamic Random Access Memory) is the best choice with the characteristic of high integration, low power, high reliablity, strong function.
在区域火灾报警控制器中，FM 31256芯片的非易失性数据存储器、实时时钟、看门狗等功能，增强系统可靠性。
The nonvolatile data memory, real-time clock, and watchdog functions of FM31256 chip were adopted by region fire alarm and control device to improve the system reliability.
本文分析了单粒子辐射对集成电路可靠性的影响，特别是对SRAM存储器的影响。
The influence of single particle radiation to IC reliability, especial to SRAM, is analyzed.
最后，对它的可靠性进行了分析，并给出在同样的冗余下，它与备份形式的存储器容错结构的可靠性比较结果。
Finally, the reliability has been analysed and the reliability comparison result with strand-by memory fault-tolerance structure in the same redundancy has b...
最后，对它的可靠性进行了分析，并给出在同样的冗余下，它与备份形式的存储器容错结构的可靠性比较结果。
Finally, the reliability has been analysed and the reliability comparison result with strand-by memory fault-tolerance structure in the same redundancy has been given.
最后，对它的可靠性进行了分析，并给出在同样的冗余下，它与备份形式的存储器容错结构的可靠性比较结果。
Finally, the reliability has been analysed and the reliability comparison result with strand-by memory fault-tolerance structure in the same redundancy...
在存储器单元比值一定的条件下，采用这种结构可以显著减小由寄生rc所带来的单元间的串扰，提高存储器读写的速度和工作可靠性。
When the cell ratio is given, the disturb induced by the parasitical RC can be effectively reduced, the read-write speed of the memory and operation reliability are improved by this method.
在存储器单元比值一定的条件下，采用这种结构可以显著减小由寄生rc所带来的单元间的串扰，提高存储器读写的速度和工作可靠性。
When the cell ratio is given, the disturb induced by the parasitical RC can be effectively reduced, the read-write speed of the memory and operation reliability are improved by this method.
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