碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
该化合物可以用于电子器件，如有机薄膜晶体管(OTFT)，显示器件，发光二极管，光伏电池，光检测器和存储单元。
The compounds can be used in electronic devices such as organic thin film transistors (OTFTs), display devices, light-emitting diodes, photovoltaic cells, photo-detectors, and memory cells.
在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
此外，利用反向偏置所述存储器单元的二极管的编程脉冲对所述存储器单元进行编程。
Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.
类似地形成导电轨和存储单元二极管的附加层级，从而构建3- D单片存储装置。
Additional levels of conductive rails and memory cell diodes are formed similarly to build the 3-d monolithic memory device.
所述集成电路包括具有二极管及与所述二极管连通的反熔丝的存储器单元。
Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
用发光二极管显示器或者液晶显示器控制其最小和最大扭矩值。内部存储器中可储存多达2000个测量数值，具有个人计算机或者串接打印机的借口。
Electronic torque Tester. Controlling of min - and maximum torque values with LED and LCD-display. Internal memory for 2000 values, interface for PC or serial printer.
激光二极管泵浦的高重复频率调Q固体激光器在激光通信、光存储、打标、焊接和测距雷达等方面已经获得了广泛应用。
The high repetition rate LD pump Q-switch solid state laser has been widely used in a lot of fields, such as the laser communication, optical storage, marking, welding and ranging radar.
由于二极管在单元尺寸上的优势，被认为是高密度相变存储器中驱动管的不二之选。
Diode is considered to be the best driver of high-density phase change Random Access Memory (PCRAM) for its advantage of the cell area.
由于二极管在单元尺寸上的优势，被认为是高密度相变存储器中驱动管的不二之选。
Diode is considered to be the best driver of high-density phase change Random Access Memory (PCRAM) for its advantage of the cell area.
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