提出了一种PIN二极管的PSPICE子电路模型。
A new PSPICE subcircuit model of power PIN diode is developed.
从VDMOS的物理结构出发建立子电路模型，进而导出描述其交直流特性的参数及模型公式。
A sub circuit model for VDMOS is built according to its physical structure. Parameters and formulas describing the device are also derived from this model.
在分析了SRAM逻辑结构中各子电路的泄漏功耗的产生机制的基础上，建立了SRAM的泄漏功耗模型，然后对SRAM的泄漏功耗进行估算。
After analyzing the producing mechanism of leakage power for each sub-circuit in SRAM, a leakage power model for each sub-circuit was established to estimate the leakage power for full SRAM.
给出了子电路的一般故障分析模型。
提出了用于数值计算的子电路离散时域等效电路模型，并以此建立了多相耦合传输线的离散时域等效电路模型。
The equivalent sub-circuit model in discrete domain is formed for numerical simulation and the equivalent model of the coupled multiphase transmission lines is then proposed in discrete domain.
提出了用于数值计算的子电路离散时域等效电路模型，并以此建立了多相耦合传输线的离散时域等效电路模型。
The equivalent sub-circuit model in discrete domain is formed for numerical simulation and the equivalent model of the coupled multiphase transmission lines is then proposed in discrete domain.
应用推荐