晶闸管属于大功率的半导体器件，决定其允许通过电流大小的标准之一是温度的高低。
Thyristor is a high-power semiconductor device, and the standard of its rated current is temperature.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。
Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.
在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。
Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.
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