文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶。
In this paper, growth and recrystallization of silicon films on ceramic substrates were studied.
另外，随着热丝与衬底间距的增大，沉积出的多晶硅薄膜样品的晶化率明显减小，薄膜的晶粒尺寸也相应减小。
In addition, with the increasing distance between the filament and the substrate, the crystalline volume fraction and the grain size of poly-Si films notablely decrease.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
从简化步骤、降低成本的角度出发，采用快速热化学气相沉积（RTCVD）法在低纯颗粒带硅（SSP）衬底上制备出了多晶硅薄膜太阳电池。
Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost.
根据仿真所得电池参数，设计了一款SSP衬底多晶硅薄膜太阳能电池，探讨了工艺过程和条件。
Finally, based on the simulated cell parameters, we designed a new SSP polycrystalline silicon thin film solar cell, and the specific process of the implementation process were discussed.
对于形成在氧化物隔离层上的器件，多晶填充的沟槽理想地穿透该隔离层从而改进从有源区到衬底的热传导。
For devices formed on an oxide isolation layer, the poly - filled trench desirably penetrates this isolation layer thereby improving thermal conduction from the active regions to the substrate.
本文主要研究陶瓷衬底上多晶硅薄膜太阳电池的制备。
The fabrication of poly-crystalline silicon thin film solar cell on ceramic substrates is studied in this thesis.
然后，在衬底上形成第一多晶硅层，以便第一多晶硅层填充开口。
Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening.
在衬底上形成第二多晶硅层，以便第二多晶硅层填充凹部。
A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.
依据多晶硅薄膜太阳能电池具有高性能、低成本的特点，廉价衬底材料成为产业化的关键。
Poly Silicon Thin Film Solar Cell has the characteristic of high performance, low cost. As we know, the cheap base material is the key to ultimately realize the Cell coming into industrialization.
最后，以具有第二既定能量密度的激光对表面覆盖有一第二非晶硅层的第二衬底实施退火处理，以形成一第二多晶硅层。
Finally, the second substrate covered with the second non-crystalline silicon layer is annealed with the laser with the second energy density to form the second polysilicon layer.
最后，以具有第二既定能量密度的激光对表面覆盖有一第二非晶硅层的第二衬底实施退火处理，以形成一第二多晶硅层。
Finally, the second substrate covered with the second non-crystalline silicon layer is annealed with the laser with the second energy density to form the second polysilicon layer.
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