本发明公开了一种多晶硅薄膜材料及其制备方法。
The invention discloses a polysilicon thin film material and a preparation method thereof.
介绍一种以多晶硅薄膜为敏感材料的压力传感器。
A polysilicon thin film pressure sensor is presented. It utilizes polysilicon thin film as stress sensitive material.
研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶。
In this paper, growth and recrystallization of silicon films on ceramic substrates were studied.
本文主要研究陶瓷衬底上多晶硅薄膜太阳电池的制备。
The fabrication of poly-crystalline silicon thin film solar cell on ceramic substrates is studied in this thesis.
着重研究了沉积工艺条件对多晶硅薄膜压阻灵敏度系数的影响。
The effect of thin film piezoresistive property related with deposit condition on polycrystalline silicon is studied.
设计了一种以多晶硅薄膜作为振动膜片的电容式硅微声传感器。
A capacitive micro-acoustic sensor with a polysilicon film as diaphragm was designed in this paper.
文章还从实验和理论上分析了影响多晶硅薄膜生长速率的因素。
According to the theory and the experiment mentioned in this paper, the factors which effect the growth rate of polysilicon film have been analysed.
本文提出了一种新的结构，在原位多晶硅薄膜热膨胀系数的确定。
This paper presents a novel structure for in situ determining thermal expansion coefficient of polysilicon thin films.
低温多晶硅薄膜晶体管(LTPSTFT)广泛应用于平板显示。
Low temperature polycrystalline silicon thin film transistors (LTPS TFTs) are widely used in the flat panel displays.
本发明公开一种多晶硅薄膜结晶品质的检测装置及其检测与控制方法。
The present invention discloses one kind of polysilicon film crystallization quality detecting device and detection and control method.
多晶硅薄膜良好的压阻特性使其在MEMS压阻式传感器中得到了广泛应用。
Polysilicon films, due to its favourable piezoresistive properties, have been widely applied in MEMS piezoresistive sensors.
文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
本文对低温多晶硅薄膜晶体管（TFT）AM-OLED的驱动技术进行了研究。
This paper aims at the research on drive technology of LTPS (Low Temperature Poly-Silicon) TFT (Thin Film Transistor) AM-OLEDs.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
根据这种方法，我们研究了氢等离子体处理对多晶硅薄膜晶体管禁带态密度的影响。
With this method, the influences of the plasma hydrogenation on the gap state density have been investigated.
最后，采用PC1D电池模拟软件对高温路线制备的多晶硅薄膜电池进行了理论模拟。
At last, we use the PC1D program to simulate polycrystalline silicon thin film solar cells prepared under high temperature.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
提出了一种表面修饰的金属诱导晶化方法，以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
多晶硅薄膜的制备方法很多，主要有化学气相沉积法、激光结晶法、金属诱导晶化法等。
Poly-Si can be produced by laser crystallization of a-Si, metal-induced crystallization of a-Si, and many other methods.
依据多晶硅薄膜太阳能电池具有高性能、低成本的特点，廉价衬底材料成为产业化的关键。
Poly Silicon Thin Film Solar Cell has the characteristic of high performance, low cost. As we know, the cheap base material is the key to ultimately realize the Cell coming into industrialization.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
利用原子力显微镜、二次离子质谱分析仪和探针，对多晶硅薄膜的高温退火特性进行了实验研究。
An experiment was conducted to study the high-temperature annealing characteristics of polysilicon films using atomic force microscope, secondary ion mass spectroscopy and probe.
根据仿真所得电池参数，设计了一款SSP衬底多晶硅薄膜太阳能电池，探讨了工艺过程和条件。
Finally, based on the simulated cell parameters, we designed a new SSP polycrystalline silicon thin film solar cell, and the specific process of the implementation process were discussed.
实验结果表明：多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
确认了改善器件自加热退化的有效途径，同时有助于揭示多晶硅薄膜晶体管自加热退化的内在机制。
This study is useful for understanding the mechanism of self-heating degradation, and to find approaches to effectively alleviate the SH effect in device operation.
本文介绍了半导体器件中的优质多晶硅薄膜的生长以及在生长多晶硅薄膜的同时怎样来监控淀积温度；
This paper introduces how to produce high quality polysilicon film in the semiconductor devices and how to monitor the deposition temperature at the same time when film grows.
本文回顾了现阶段液晶显示器的几个研究热点，包括透反射液晶显示器、多晶硅薄膜晶体管技术及硅基液晶。
In this paper, we reviewed several hotspots of LCD research, including Transparent LCD (TS-LCD), poly-silicon thin film transistor, liquid crystal on silicon (Lcos).
本文回顾了现阶段液晶显示器的几个研究热点，包括透反射液晶显示器、多晶硅薄膜晶体管技术及硅基液晶。
In this paper, we reviewed several hotspots of LCD research, including Transparent LCD (TS-LCD), poly-silicon thin film transistor, liquid crystal on silicon (Lcos).
应用推荐