简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
该器件为三相结构，采用埋沟和三层多晶硅技术。
The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
本文介绍了半导体器件中的优质多晶硅薄膜的生长以及在生长多晶硅薄膜的同时怎样来监控淀积温度；
This paper introduces how to produce high quality polysilicon film in the semiconductor devices and how to monitor the deposition temperature at the same time when film grows.
在研制器件过程中，多晶硅制备的工艺条件对其性能影响较大。
The technological conditions of polysilicon preparation has an important effect on the manufacturing process.
器件采用最小2微米设计规则，两层多晶硅结构。
This detector line array is fabricated using 2 micron design rule and a double level poly silicon structure.
本文对已研制成的线阵三相多晶硅交迭栅埋沟CCD (BCCD)摄象器件的结构、原理及实验、结果做一个简要的阐述。
This paper briefly describes the structure and principle of newly developed linear-array buried-channel CCD (BCCD) with 3-phase, polysilicon overlay-gate, and, experimental results are presented.
确认了改善器件自加热退化的有效途径，同时有助于揭示多晶硅薄膜晶体管自加热退化的内在机制。
This study is useful for understanding the mechanism of self-heating degradation, and to find approaches to effectively alleviate the SH effect in device operation.
该器件采用三相结构，埋沟和四层多晶硅技术。
The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.
在一种沟槽栅极型MIS器件中，在沟槽中形成与栅极的接触，从而消除了使栅极材料，通常为多晶硅，延伸至沟槽外的需要。
In a trench-gated MIS device, contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench.
由于多晶硅回刻蚀至比整个器件的硅的表面低，通常不再需要多晶硅掩模，从而节省了制造成本。
Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
以表面加工多晶硅悬臂梁为例分析了MEMS器件在振动环境下的可靠性。
The MEMS reliability of a surface micromachined polysilicon cantilever under vibration is investigated.
以表面加工多晶硅悬臂梁为例分析了MEMS器件在振动环境下的可靠性。
The MEMS reliability of a surface micromachined polysilicon cantilever under vibration is investigated.
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