制造集成电路需要将如半导体和金属等多层材料放置在硅片上。
Making integrated circuits involves depositing layers of materials such as semiconductors and metals on a silicon wafer.
本发明涉及多层介电结构的生产并涉及包含这些结构的半导体设备和集成电路。
The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures.
本发明涉及多层介电结构的生产并涉及包含这些结构的半导体设备和集成电路。
The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures.
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